“We Wouldn’t have had such a boom of electric vehicles without silicon carbide,�?stated STMicroeletronics executive Edoardo Merli. One of such specific properties is that gate oxides in SiC-based power devices are generally characterized by a relatively large number of interface states, resulting in the so-termed threshold-voltage hysteresis. How these devices https://x.com/hongyuxin20/status/1818176952878145781